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IXFL 82N60P
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
ISOPLUS264 (IXFL) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 20 V; I D = I T , Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = I T
R G = 1 ? (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = I T
50
80
23
1490
200
28
23
79
24
240
96
67
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Note: Bottom heatsink meets
2500Vrms Isolation to the other pins.
R thJC
0.20 ° C/W
R thCS
0.13
° C/W
Source-Drain Diode
Characteristic Values
Symbol
Test Conditions
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
I S
I SM
V GS = 0 V
Repetitive
82
200
A
A
V SD
t rr
Q RM
I RM
I F = I S , V GS = 0 V, Note 1
I F = 25A, -di/dt = 100 A/ μ s
V R = 100V
0.6
6.0
1.5
200
V
ns
μ C
A
Ref: IXYS CO 0128 R0
Notes:
1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
Test Current I T = 41A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6,771,478 B2
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